Datasheet4U Logo Datasheet4U.com

GFP50N06 - MOSFET

Datasheet Summary

Features

  • () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃) Absolute maximum ratings Characteristics T=25℃ unless otherwise noted Symbol BV DSS ID V GS E AS PD T STG Rθ JC V SD Value 60 50 ±20 470 130 -55.
  • 175 1.15 1.4 Units V A V mJ W ℃ ℃/W V Drain-SourceVoltage Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipation Operating and Storage Temperature Range Thermal Resistance ,Junc.

📥 Download Datasheet

Datasheet preview – GFP50N06

Datasheet Details

Part number GFP50N06
Manufacturer Chinahaiso electronic
File Size 117.61 KB
Description MOSFET
Datasheet download datasheet GFP50N06 Datasheet
Additional preview pages of the GFP50N06 datasheet.

📁 Similar Datasheet

  • GFP50N03 - N-Channel Enhancement-Mode MOSFET (General Semiconductor)
  • GFP5N60 - N-Channel enhancement mode power field effect Transistors (ETC)
  • GFP5N60 - Field effect transistor (Haiso)
  • GFP201 - Cermet Industrial Panel Controls (TOCOS)
  • GFP60N03 - N-Channel Enhancement-Mode MOSFET (General Semiconductor)
  • GFP70N03 - N-Channel Enhancement-Mode MOSFET (General Semiconductor)
  • GFP740 - MOSFET (Chinahaiso)
  • GFP8N60 - N-Channel enhancement mode power field effect Transistors (ETC)
  • GFP8N60 - N-channel power FET (Haiso)
  • GFPUSRA1.25 - High-power LED (OSRAM)
Other Datasheets by Chinahaiso electronic
  • GFP4N60 - N-channel enhancement mode power field effect Transistors

Full PDF Text Transcription

Click to expand full text
Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃) Absolute maximum ratings Characteristics T=25℃ unless otherwise noted Symbol BV DSS ID V GS E AS PD T STG Rθ JC V SD Value 60 50 ±20 470 130 -55 –175 1.15 1.4 Units V A V mJ W ℃ ℃/W V Drain-SourceVoltage Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipation Operating and Storage Temperature Range Thermal Resistance ,Junction-to Case Drain-source Diode Forward Voltage 1 of 2 http://www.Datasheet4U.com Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 Typ. 18 880 430 110 60 185 75 60 39 9.5 1.
Published: |