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GFP50N06 - MOSFET

Key Features

  • () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃) Absolute maximum ratings Characteristics T=25℃ unless otherwise noted Symbol BV DSS ID V GS E AS PD T STG Rθ JC V SD Value 60 50 ±20 470 130 -55.
  • 175 1.15 1.4 Units V A V mJ W ℃ ℃/W V Drain-SourceVoltage Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipation Operating and Storage Temperature Range Thermal Resistance ,Junc.

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Datasheet Details

Part number GFP50N06
Manufacturer Chinahaiso electronic
File Size 117.61 KB
Description MOSFET
Datasheet download datasheet GFP50N06 Datasheet

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Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃) Absolute maximum ratings Characteristics T=25℃ unless otherwise noted Symbol BV DSS ID V GS E AS PD T STG Rθ JC V SD Value 60 50 ±20 470 130 -55 –175 1.15 1.4 Units V A V mJ W ℃ ℃/W V Drain-SourceVoltage Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Power Dissipation Operating and Storage Temperature Range Thermal Resistance ,Junction-to Case Drain-source Diode Forward Voltage 1 of 2 http://www.Datasheet4U.com Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 Typ. 18 880 430 110 60 185 75 60 39 9.5 1.