These N-channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guranteed to withstand a specified level of energy in the breakdown avalanche mode of operation
All of these power MOSFETs are designed for applications such as sw
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MOSFET GFP 740
GFP 740
General description These N-channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guranteed to withstand a specified level of energy in the breakdown avalanche mode of operation All of these power MOSFETs are designed for applications such as switching convertors relay drivers. These types can be operated directly from integrated circuits.
Absolute maximum ratings Characteristics
T=25℃ unless otherwise noted Symbol
BV DSS ID V GS E AS PD T STG Rθ JC V SD
Value
400 10 ±20 520 125 -55 –150 1..67 1.