Datasheet4U Logo Datasheet4U.com

CEB4060A - N-Channel Enhancement Mode Field Effect Transistor

Download the CEB4060A datasheet PDF. This datasheet also covers the CEB4060A_Chino variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 60V, 17A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEB4060A_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEB4060A
Manufacturer Chino-Excel Technology
File Size 396.45 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEB4060A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CEB4060AL N-Channel 60V MOSFET VBsemi
CEB41A2 N-Channel MOSFET CET
CEB4301 P-Channel MOSFET CET
CEB45N10 N-Channel MOSFET CET
CEB01N6 N-Channel MOSFET CET

Other Datasheets by Chino-Excel Technology

Part Number Description
CEB4060AL N-Channel Enhancement Mode Field Effect Transistor
CEB4060AR N-Channel Enhancement Mode Field Effect Transistor
CEB4060 N-Channel Enhancement Mode Field Effect Transistor
CEB4060 N-Channel Enhancement Mode Field Effect Transistor
CEB4060 N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEP4060A/CEB4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a ID IDM 17 12 68 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 47 0.