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CEB6031L - N-Channel Logic Level Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEB6031L, a member of the CEB6031L_Chino N-Channel Logic Level Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • 30V , 60A , RDS(ON)=10m Ω @VGS=10V. RDS(ON)=15m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 S.

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Datasheet preview – CEB6031L

Datasheet Details

Part number CEB6031L
Manufacturer Chino-Excel Technology
File Size 36.43 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEB6031L Datasheet
Additional preview pages of the CEB6031L datasheet.

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Full PDF Text Transcription

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CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 FEATURES 30V , 60A , RDS(ON)=10m Ω @VGS=10V. RDS(ON)=15m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @TJ=125 C -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Ć16 60 180 60 75 0.
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