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CEB6060L - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEB6060L, a member of the CEB6060L_Chino N-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • 60V, 52.4A,RDS(ON) = 21mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S.

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Datasheet preview – CEB6060L

Datasheet Details

Part number CEB6060L
Manufacturer Chino-Excel Technology
File Size 395.84 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEB6060L Datasheet
Additional preview pages of the CEB6060L datasheet.

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Full PDF Text Transcription

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CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 60 ±16 52.4 37 210 120 0.
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