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CEB6060N - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • 60V, 42A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP6060N/CEB6060N D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S.

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Datasheet Details

Part number CEB6060N
Manufacturer CET
File Size 439.30 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEB6060N Datasheet

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP6060N/CEB6060N D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60 Units V V A A W W/ C C ±20 42 168 88 0.