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CEB6060R - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEB6060R, a member of the CEB6060R_Chino N-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • 60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

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Datasheet preview – CEB6060R

Datasheet Details

Part number CEB6060R
Manufacturer Chino-Excel Technology
File Size 387.98 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEB6060R Datasheet
Additional preview pages of the CEB6060R datasheet.

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Full PDF Text Transcription

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CEP6060R/CEB6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 50 IDM 200 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 88 0.
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