Datasheet4U Logo Datasheet4U.com

CEM3032 - N-Channel Enhancement Mode Field Effect Transistor

Download the CEM3032 datasheet PDF. This datasheet also covers the CEM3032-Chino variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 30V, 18A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM3032-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM3032
Manufacturer Chino-Excel Technology
File Size 561.44 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM3032 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CEM3053 P-Channel MOSFET CET
CEM3060 N-Channel Enhancement Mode Field Effect Transistor CET
CEM3082 N-Channel Enhancement Mode Field Effect Transistor CET
CEM3083 P-Channel MOSFET CET
CEM3109 Dual MOSFET CET

Other Datasheets by Chino-Excel Technology

Part Number Description
CEM3252L N-Channel Enhancement Mode Field Effect Transistor
CEM1010 Single N-Channel Enhancement Mode Field Effect Transistor
CEM2005 Dual Enhancement Mode Field Effect Transistor(N and Channel)
CEM2030A Dual Enhancement Mode Field Effect Transistor(N and P Channel)
CEM4042 N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEM3032 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 18A, RDS(ON) = 4.8mΩ @VGS = 10V. RDS(ON) = 6.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 18 IDM 72 Maximum Power Dissipation PD 2.