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CEM1010 - Single N-Channel Enhancement Mode Field Effect Transistor

Download the CEM1010 datasheet PDF. This datasheet also covers the CEM1010-Chino variant, as both devices belong to the same single n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 100V, 9.5A, RDS(ON) = 15.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM1010-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM1010
Manufacturer Chino-Excel Technology
File Size 411.92 KB
Description Single N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM1010 Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEM1010 Single N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 9.5A, RDS(ON) = 15.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 100 VGS ±20 Drain Current-Continuous TA=25 C ID TA=100 C T=1 sec e 9.5 6 17 T=0.1 sec e 25 Drain Current-Pulsed a IDM 38 Maximum Power Dissipation PD 2.