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CEM4410B - N-Channel MOSFET

Download the CEM4410B datasheet PDF. This datasheet also covers the CEM4410B-Chino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 30V , 12.5A , RDS(ON)=9.5m Ω @VGS=10V. RDS(ON)=14m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. D 8 D 7 D 6 D 5 1 2 3 4 SO-8 1 S S S G.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM4410B-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM4410B
Manufacturer Chino-Excel Technology
File Size 47.78 KB
Description N-Channel MOSFET
Datasheet download datasheet CEM4410B Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CEM4410 N-Channel Enhancement Mode Field Effect Transistor
CEM4410A N-Channel Enhancement Mode Field Effect Transistor
CEM4412-XA N-Channel Enhancement Mode Field Effect Transistor
CEM4412S1 N-Channel Enhancement Mode Field Effect Transistor
CEM4416 N-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEM4410B Dec. 2002 N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 12.5A , RDS(ON)=9.5m Ω @VGS=10V. RDS(ON)=14m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. D 8 D 7 D 6 D 5 1 2 3 4 SO-8 1 S S S G ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Symbol VDS VGS ID IDM a Limit 30 Unit V V A A A W C Ć20 Ć12.5 Ć50 2.3 2.