CEM4410B
CEM4410B is N-Channel MOSFET manufactured by Chino-Excel Technology.
- Part of the CEM4410B-Chino comparator family.
- Part of the CEM4410B-Chino comparator family.
FEATURES
30V , 12.5A , RDS(ON)=9.5m Ω @VGS=10V. RDS(ON)=14m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package.
SO-8 1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a
Symbol VDS VGS ID IDM a
Limit 30
Unit V V A A A W C
Ć20 Ć12.5 Ć50
2.3 2.5 -55 to 150
Drain-Source Diode Forward Current Maximum Power Dissipation a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
RįJA
C/W
5-2
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) g FS c
Symbol
Condition
VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS =Ć20V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 10A VGS = 4.5V, ID =5A VDS = 5V, VGS = 10V VDS = 15V, ID = 10A
Min Typ C Max Unit
30 1
Ć100
V µA n A V mΩ mΩ A 18 2237 1228 320 S
PF PF PF
ON CHARACTERISTICS b
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 1 7.5 11 25 3 9.5 14
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer...
