CEM4412S1 Datasheet PDF - Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Specs

CEM4412S1 - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEM4412S1, a member of the CEM4412S1_Chino N-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

30V , 7A , RDS(ON)=28m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. Surface mount package. D DDD 8 7 65 SO-8 1 1 234 S SSG.

Datasheet Details

Part number	CEM4412S1
Manufacturer	Chino-Excel Technology
File Size	51.78 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	CEM4412S1 Datasheet
Additional preview pages of the CEM4412S1 datasheet.

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Full PDF Text Transcription

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CEM4412S1 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V , 7A , RDS(ON)=28m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. Surface mount package. D DDD 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @TJ=125 C -Pulsed ID IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and Storage 15 Temperature Range TJ, TSTG Limit 30 Ć20 Ć7 Ć30 2.3 2.

Published: Mar 23, 2005 |