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CEM4412S1 - N-Channel Enhancement Mode Field Effect Transistor

Download the CEM4412S1 datasheet PDF. This datasheet also covers the CEM4412S1_Chino variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 30V , 7A , RDS(ON)=28m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. Surface mount package. D DDD 8 7 65 SO-8 1 1 234 S SSG.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM4412S1_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM4412S1
Manufacturer Chino-Excel Technology
File Size 51.78 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM4412S1 Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CEM4412-XA N-Channel Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEM4412S1 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V , 7A , RDS(ON)=28m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. Surface mount package. D DDD 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @TJ=125 C -Pulsed ID IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and Storage 15 Temperature Range TJ, TSTG Limit 30 Ć20 Ć7 Ć30 2.3 2.