Chino-Excel Technology CEM4539
Dual Enhancement Mode Field Effect Transistor(N and P Channel)
| Part No. | CEM4539 |
|---|---|
| Datasheet | CEM4539 Download |
| Manufacturer |  Chino-Excel Technology |
| Description | Dual Enhancement Mode Field Effect Transistor(N and P Channel) |
| Buy | Stock & Price |
FEATURES
30V, 5.8A, RDS(ON) = 37mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. -30V, -4.9A, RDS(ON) = 53mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 D1 D2 D2 87 65 1234 S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS
TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 5.8 IDM 30 P-Channel -30 ±20 -4.9 -30 Maximum Power Dissipation PD 2.0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A W C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W 2002.July 5 - 78 CEM4539 N-ChannelELECTRICAL CHARACTERISTICS
TA = 25 C unless o
