Datasheet4U Logo Datasheet4U.com

CEM4052 - N-Channel Enhancement Mode Field Effect Transistor

Download the CEM4052 datasheet PDF. This datasheet also covers the CEM4052-Chino variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 40V, 16A, RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 10mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM4052-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM4052
Manufacturer Chino-Excel Technology
File Size 242.21 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM4052 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CEM4042 N-Channel MOSFET VBsemi
CEM4063 p- CET
CEM4201 p- CET
CEM4207 p- CET
CEM4228 Dual N-Channel Enhancement Mode Field Effect Transistor CET

Other Datasheets by Chino-Excel Technology

Part Number Description
CEM4042 N-Channel Enhancement Mode Field Effect Transistor
CEM4204 N-Channel Enhancement Mode Field Effect Transistor
CEM4410 N-Channel Enhancement Mode Field Effect Transistor
CEM4410A N-Channel Enhancement Mode Field Effect Transistor
CEM4410B N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEM4052 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 16A, RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 10mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 40 VGS ±20 ID 16 IDM 64 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W Details are subject to change without notice .