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CEM4204 - N-Channel Enhancement Mode Field Effect Transistor

Download the CEM4204 datasheet PDF. This datasheet also covers the CEM4204-Chino variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 40V, 7.3A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM4204-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM4204
Manufacturer Chino-Excel Technology
File Size 363.30 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM4204 Datasheet

📁 Similar Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CEM4042 N-Channel Enhancement Mode Field Effect Transistor
CEM4052 N-Channel Enhancement Mode Field Effect Transistor
CEM4410 N-Channel Enhancement Mode Field Effect Transistor
CEM4410A N-Channel Enhancement Mode Field Effect Transistor
CEM4410B N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEM4204 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 7.3A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 40 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 7.3 IDM 25 Maximum Power Dissipation PD 2.