CEM8410 - N-Channel Enhancement Mode Field Effect Transistor
Chino-Excel Technology
Download the CEM8410 datasheet PDF.
This datasheet also covers the CEM8410_Chino variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
30V, 10A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65
SO-8
1
1 234 S SSG.
Note: The manufacturer provides a single datasheet file (CEM8410_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.
Datasheet Details
Part number
CEM8410
Manufacturer
Chino-Excel Technology
File Size
59.47 KB
Description
N-Channel Enhancement Mode Field Effect Transistor
Full PDF Text Transcription for CEM8410 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CEM8410. For precise diagrams, and layout, please refer to the original PDF.
CEM8410 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 10A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extr...
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10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 10 IDM 30 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/
CEM8410 Datasheet
