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CEM8435A - P-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEM8435A, a member of the CEM8435A_Chino P-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • -30V, -7.9A, RDS(ON) = 24mΩ @VGS = -10V. RDS(ON) = 40mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG.

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Datasheet preview – CEM8435A

Datasheet Details

Part number CEM8435A
Manufacturer Chino-Excel Technology
File Size 102.07 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEM8435A Datasheet
Additional preview pages of the CEM8435A datasheet.

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Full PDF Text Transcription

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CEM8435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.9A, RDS(ON) = 24mΩ @VGS = -10V. RDS(ON) = 40mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -30 VGS ±20 ID -7.9 IDM -25 Maximum Power Dissipation PD 2.
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