CEM8435A - P-Channel Enhancement Mode Field Effect Transistor
Chino-Excel Technology
Download the CEM8435A datasheet PDF.
This datasheet also covers the CEM8435A_Chino variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
-30V, -7.9A, RDS(ON) = 24mΩ @VGS = -10V. RDS(ON) = 40mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65
SO-8
1
1 234 S SSG.
Note: The manufacturer provides a single datasheet file (CEM8435A_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.
Datasheet Details
Part number
CEM8435A
Manufacturer
Chino-Excel Technology
File Size
102.07 KB
Description
P-Channel Enhancement Mode Field Effect Transistor
Full PDF Text Transcription for CEM8435A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CEM8435A. For precise diagrams, and layout, please refer to the original PDF.
CEM8435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.9A, RDS(ON) = 24mΩ @VGS = -10V. RDS(ON) = 40mΩ @VGS = -4.5V. Super high dense cell design fo...
View more extracted text
S = -10V. RDS(ON) = 40mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -30 VGS ±20 ID -7.9 IDM -25 Maximum Power Dissipation PD 2.
CEM8435A Datasheet
