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CEM9953A - Dual P-Channel Enhancement Mode MOSFET

Download the CEM9953A datasheet PDF. This datasheet also covers the CEM9953A_Chino variant, as both devices belong to the same dual p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -30V, -3.5A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 130mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 5 SO-8 1 123 4 S1 G1 S2 G2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM9953A_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM9953A
Manufacturer Chino-Excel Technology
File Size 83.88 KB
Description Dual P-Channel Enhancement Mode MOSFET
Datasheet download datasheet CEM9953A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEM9953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.5A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 130mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -30 VGS ±20 ID -3.5 IDM -14 Maximum Power Dissipation PD 2.0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units V V A A W C Units C/W 2002.