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CEP02N6 - N-channel Enhancement Mode Field Effect Transistor

Download the CEP02N6 datasheet PDF. This datasheet also covers the CEP02N6_Chino variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 600V , 2A , RDS(ON)=5Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEP02N6_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEP02N6
Manufacturer Chino-Excel Technology
File Size 45.54 KB
Description N-channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEP02N6 Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CEP04N6 N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEP02N6/CEB02N6 Sep. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 2A , RDS(ON)=5Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 Unit V V A A A W W/ C C Ć 30 2 6 6 60 0.