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CEP02N6 - N-channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEP02N6, a member of the CEP02N6_Chino N-channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • 600V , 2A , RDS(ON)=5Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S.

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Datasheet preview – CEP02N6

Datasheet Details

Part number CEP02N6
Manufacturer Chino-Excel Technology
File Size 45.54 KB
Description N-channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEP02N6 Datasheet
Additional preview pages of the CEP02N6 datasheet.

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Full PDF Text Transcription

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CEP02N6/CEB02N6 Sep. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 2A , RDS(ON)=5Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 Unit V V A A A W W/ C C Ć 30 2 6 6 60 0.
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