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CEP04N6 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Download the CEP04N6 datasheet PDF. This datasheet also covers the CEP04N6_Chino variant, as both devices belong to the same n-channel logic level enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Type CEP04N6 CEB04N6 CEF04N6 VDSS 600V 600V 600V RDS(ON) 2.4Ω 2.4Ω 2.4Ω ID 4.2A 4.2A 4.2A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEP04N6_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEP04N6
Manufacturer Chino-Excel Technology
File Size 355.32 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEP04N6 Datasheet

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Other Datasheets by Chino-Excel Technology

Part Number Description
CEP02N6 N-channel Enhancement Mode Field Effect Transistor
CEP05P03 P-Channel Enhancement Mode Field Effect Transistor
CEP06N5 N-Channel Logic Level Enhancement Mode Field Effect Transistor
CEP1012 N-Channel Enhancement Mode Field Transistor
CEP1012L N-Channel Enhancement Mode Field Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CEP04N6/CEB04N6 CEF04N6 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP04N6 CEB04N6 CEF04N6 VDSS 600V 600V 600V RDS(ON) 2.4Ω 2.4Ω 2.4Ω ID 4.2A 4.2A 4.2A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS 600 VGS ±30 ID 4.2 2.6 IDM e 16.8 104 PD 0.83 TO-220F 4.2 d 2.6 d 16.8 d 35 0.