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CEP04N65 - N-Channel Enhancement Mode Field Effect Transistor

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Features

  • Type CEP04N65 CEB04N65 CEF04N65 VDSS 650V RDS(ON) 2.8Ω ID 4A @VGS 10V 650V 2.8Ω 4A 10V 650V 2.8Ω 4A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP04N65
Manufacturer CET
File Size 356.39 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEP04N65 Datasheet
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CEP04N65/CEB04N65 CEF04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP04N65 CEB04N65 CEF04N65 VDSS 650V RDS(ON) 2.8Ω ID 4A @VGS 10V 650V 2.8Ω 4A 10V 650V 2.8Ω 4A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS 650 VGS ±30 ID 4 2.4 IDM e 16 104 PD 0.83 TO-220F 4d 2.4 d 16 d 35 0.
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