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CEP04N7G - N-Channel MOSFET

Key Features

  • Type CEP04N7G CEB04N7G CEF04N7G VDSS 700V 700V 700V RDS(ON) 3.3Ω 3.3Ω 3.3Ω ID 4A 4A 4A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP04N7G
Manufacturer CET
File Size 400.63 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP04N7G Datasheet

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Full PDF Text Transcription (Reference)

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CEP04N7G/CEB04N7G CEF04N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP04N7G CEB04N7G CEF04N7G VDSS 700V 700V 700V RDS(ON) 3.3Ω 3.3Ω 3.3Ω ID 4A 4A 4A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 700 ±30 4 16 84 0.67 4d 16 d 35 0.