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CEP04N7 - N-Channel MOSFET

Key Features

  • Type CEP04N7 CEB04N7 CEI04N7 CEF04N7 VDSS 700V 700V 700V 700V RDS(ON) 3.5Ω 3.5Ω 3.5Ω 3.5Ω ID 4A 4A 4A 4A d @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP04N7
Manufacturer CET
File Size 127.86 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP04N7 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEP04N7/CEB04N7 CEI04N7/CEF04N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP04N7 CEB04N7 CEI04N7 CEF04N7 VDSS 700V 700V 700V 700V RDS(ON) 3.5Ω 3.5Ω 3.5Ω 3.5Ω ID 4A 4A 4A 4A d @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.