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CEP01N6G - N-Channel MOSFET

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Features

  • Type CEP01N6G CEB01N6G CEF01N6G VDSS 600V 600V 600V RDS(ON) 9.3Ω 9.3Ω 9.3Ω ID @VGS 1A 10V 1A 10V 1A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP01N6G
Manufacturer CET
File Size 349.81 KB
Description N-Channel MOSFET
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Full PDF Text Transcription

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CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6G CEB01N6G CEF01N6G VDSS 600V 600V 600V RDS(ON) 9.3Ω 9.3Ω 9.3Ω ID @VGS 1A 10V 1A 10V 1A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 600 ±30 1 4 41 0.33 1d 4d 27 0.
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