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CEP01N6 - N-Channel MOSFET

Key Features

  • Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 650V RDS(ON) 15Ω 15Ω 15Ω 15Ω ID 1A 1A 1A 1A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEP01N6
Manufacturer CET
File Size 88.33 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP01N6 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CEP01N6/CEB01N6 CEI01N6/CEF01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 650V RDS(ON) 15Ω 15Ω 15Ω 15Ω ID 1A 1A 1A 1A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.