CES2307 Overview
P-Channel Enhancement Mode Field Effect Transistor.
CES2307 Key Features
- 30V, -3.2A, RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON).
CES2307 datasheet by Chino-Excel Technology.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | CES2307 |
|---|---|
| Datasheet | CES2307 CES2307_Chino Datasheet (PDF) |
| File Size | 427.88 KB |
| Manufacturer | Chino-Excel Technology |
| Description | P-Channel MOSFET |
|
|
|
P-Channel Enhancement Mode Field Effect Transistor.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
![]() |
CES2307A | P-Channel MOSFET | CET |
View all Chino-Excel Technology datasheets
| Part Number | Description |
|---|---|
| CES2302 | N-Channel MOSFET |
| CES2303 | P-Channel MOSFET |
| CES2305 | P-Channel MOSFET |
| CES2308 | N-Channel MOSFET |
| CES2309 | P-Channel MOSFET |
| CES2310 | N-Channel MOSFET |
| CES2312 | N-Channel MOSFET |
| CES2313 | P-Channel MOSFET |
| CES2313A | P-Channel MOSFET |
| CES2314 | N-Channel MOSFET |