CES2309 Description
CES2309 P-Channel Enhancement Mode Field Effect Transistor.
CES2309 Key Features
- 20V, -2.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON)
CES2309 Datasheet
| Part number | CES2309 |
|---|---|
| Download | CES2309 Datasheet (PDF) |
| File Size | 131.99 KB |
| Manufacturer | Chino-Excel Technology |
| Description | P-Channel MOSFET |
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