CES2323 Description
CES2323 P-Channel Enhancement Mode Field Effect Transistor.
CES2323 Key Features
- 30V, -4.1A, RDS(ON) = 48mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). R
CES2323 Datasheet
| Part number | CES2323 |
|---|---|
| Download | CES2323 Datasheet (PDF) |
| File Size | 273.59 KB |
| Manufacturer | Chino-Excel Technology |
| Description | P-Channel MOSFET |
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