CET CES2321
P-Channel MOSFET
| Part No. | CES2321 |
|---|---|
| Datasheet | CES2321 Download |
| Manufacturer |  CET |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
-20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 62mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D DS G SOT-23 G SABSOLUTE MAXIMUM RATINGS
TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID -3.8 IDM -15.2 Maximum Power Dissipation PD 1.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 4. 2012.Jan CES2321ELECTRICAL CHARACTERISTICS
TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS...
