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CES2321A - P-Channel MOSFET

Key Features

  • -20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. D DS G SOT-23 G S.

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Datasheet Details

Part number CES2321A
Manufacturer CET
File Size 553.67 KB
Description P-Channel MOSFET
Datasheet download datasheet CES2321A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CES2321A P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. D DS G SOT-23 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID -3.8 IDM -15.2 Maximum Power Dissipation PD 1.