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CEU10P10 - P-Channel MOSFET

Download the CEU10P10 datasheet PDF. This datasheet also covers the CEU10P10_Chino variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -100V, -8A, RDS(ON) = 350mΩ @VGS = -10V. CED10P10/CEU10P10 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEU10P10_Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEU10P10
Manufacturer Chino-Excel Technology
File Size 409.51 KB
Description P-Channel MOSFET
Datasheet download datasheet CEU10P10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -8A, RDS(ON) = 350mΩ @VGS = -10V. CED10P10/CEU10P10 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -100 Units V V A A W W/ C C ±30 -8 -32 50 0.