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AKT2055Q - 20V N-Channel Power MOSFET

Datasheet Summary

Description

The AKT2055Q uses advanced trench technology to provide excellent RDS(ON), low gate charge This device is suitable for use in Load Switch,PWM Application, Power management and general purpose applications.

3.3 Package rceTek Parameter Drain-Sourc

Features

  • Extremely Low RDS(on): Typ. RDS(on) = 3.1 mΩ @VGS=4.5 V, Id=30 A.
  • Good stability and uniformity.
  • 100% avalanche tested.
  • Excellent package for good heat dissipation General.

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Datasheet Details

Part number AKT2055Q
Manufacturer ChipSourceTek
File Size 781.36 KB
Description 20V N-Channel Power MOSFET
Datasheet download datasheet AKT2055Q Datasheet
Additional preview pages of the AKT2055Q datasheet.

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Full PDF Text Transcription

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AKT2055Q AKT2055Q 20V N-channel enhancement mode MOSFET Features • Extremely Low RDS(on): Typ.RDS(on) = 3.1 mΩ @VGS=4.5 V, Id=30 A • Good stability and uniformity • 100% avalanche tested • Excellent package for good heat dissipation General Description The AKT2055Q uses advanced trench technology to provide excellent RDS(ON), low gate charge This device is suitable for use in Load Switch,PWM Application, Power management and general purpose applications. Symbol VDS ID IDM VGS EAS PD Tj ,Tstg PDFN 3.3*3.
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