AKT2055Q Datasheet | ChipSourceTek

Features - Extremely Low RDS(on): Typ.RDS(on) = 3.1 mΩ @VGS=4.5 V, Id=30 A - Good stability and uniformity - 100% avalanche tested - Excellent package for good heat dissipation General Description The AKT2055Q uses advanced trench technology to provide excellent RDS(ON), low gate charge This device is suitable for use in Load Switch,PWM Application, Power management and general purpose applications. Symbol VDS IDM VGS EAS PD Tj ,Tstg PDFN 3.3- 3.3 Package 源特科r技ce Tek Parameter Drain-Source Voltage u Drain Current - Continuous (TC= 25°C) - Continuous (TC= 100°C) 矽 o Drain Current - Pulsed (Note 1) Gate-Source Voltage S Single Pulsed Avalanche Energy (Note 2) ip Power Dissipation (TC = 25°C) - Derate above 25°C Ch Operating and Storage Temperature Range Value 20 55 35 220 ± 12 88 30 0.54 -55 to +150 Units V A A A V m J W W/°C o C - Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Value 3.2 Units °C/W TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://.Chip Source Tek. E-mail: Sales@Chip Source Tek. Tony.Wang@Chip Source Tek. Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics...