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AKT3080K - 30V N-channel enhancement mode MOSFET

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Description

Extremely Low RDS(on): Typ.RDS(on) = 4.0 mΩ @VGS=10 V, Id=30 A Good stability and uniformity 100% avalanche tested Excellent package for good heat dissipation The AKT3080K uses advanced trench technology to provide excellent RDS(ON), low gate charge This dev

Features

  • AKT3080K General.

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Datasheet Details

Part number AKT3080K
Manufacturer ChipSourceTek
File Size 1.08 MB
Description 30V N-channel enhancement mode MOSFET
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AKT3080K 30V N-channel enhancement mode MOSFET AKT3080K Features AKT3080K General Description • Extremely Low RDS(on): Typ.RDS(on) = 4.0 mΩ @VGS=10 V, Id=30 A • Good stability and uniformity • 100% avalanche tested • Excellent package for good heat dissipation The AKT3080K uses advanced trench technology to provide excellent RDS(ON), low gate charge This device is suitable for use in Load Switch,PWM Application, Power Management and general purpose applications.
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