AKT3080K Datasheet | ChipSourceTek

Features AKT3080K General Description - Extremely Low RDS(on): Typ.RDS(on) = 4.0 mΩ @VGS=10 V, Id=30 A - Good stability and uniformity - 100% avalanche tested - Excellent package for good heat dissipation The AKT3080K uses advanced trench technology to provide excellent RDS(ON), low gate charge This device is suitable for use in Load Switch,PWM Application, Power Management and general purpose applications. TO-252-2L Package 特科技ce Tek Symbol r VDS 源 u ID Parameter Drain-Source Voltage Drain Current - Continuous (TC= 25°C) - Continuous (TC= 100°C) o IDM Drain Current - Pulsed (Note 1) 矽 S VGS Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) p PD Power Dissipation (TC = 25°C) i Tj ,Tstg Operating and Storage Temperature Range Ch - Drain current limited by maximum junction temperature Value 30 80 52- 320- ± 20 131 -55 to +175 Units V A A A V m J W o C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Value 0.973 47.13 Units °C/W °C/W TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 Page 1 of 8 WEB:Http://.Chip Source...