Datasheet4U Logo Datasheet4U.com

AKT3080K - 30V N-channel enhancement mode MOSFET

General Description

Extremely Low RDS(on): Typ.RDS(on) = 4.0 mΩ @VGS=10 V, Id=30 A Good stability and uniformity 100% avalanche tested Excellent package for good heat dissipation The AKT3080K uses advanced trench technology to provide excellent RDS(ON), low gate charge This dev

Key Features

  • AKT3080K General.

📥 Download Datasheet

Datasheet Details

Part number AKT3080K
Manufacturer ChipSourceTek
File Size 1.08 MB
Description 30V N-channel enhancement mode MOSFET
Datasheet download datasheet AKT3080K Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by ChipSourceTek

Part Number Description
AKT2055Q 20V N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AKT3080K 30V N-channel enhancement mode MOSFET AKT3080K Features AKT3080K General Description • Extremely Low RDS(on): Typ.RDS(on) = 4.0 mΩ @VGS=10 V, Id=30 A • Good stability and uniformity • 100% avalanche tested • Excellent package for good heat dissipation The AKT3080K uses advanced trench technology to provide excellent RDS(ON), low gate charge This device is suitable for use in Load Switch,PWM Application, Power Management and general purpose applications.