Datasheet Details
| Part number | CST2301D-S50 |
|---|---|
| Manufacturer | ChipSourceTek |
| File Size | 0.99 MB |
| Description | P-Channel MOSFET |
| Datasheet | CST2301D-S50-ChipSourceTek.pdf |
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Overview: Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID -20V 75mΩ.
| Part number | CST2301D-S50 |
|---|---|
| Manufacturer | ChipSourceTek |
| File Size | 0.99 MB |
| Description | P-Channel MOSFET |
| Datasheet | CST2301D-S50-ChipSourceTek.pdf |
|
|
|
SOT23 Pin Configuration The S50 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
技 The S50 meet the RoHS and Green Product k requirement with full function reliability approved.
科 Te Absolute Maximum Ratings 特 e Symbol 源 rc VDS VGS u ID@TA=25℃ ID@TA=70℃ 矽 o IDM PD@TA=25℃ S TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range ip Thermal Data h Symbol CRθJA Parameter Thermal Resistance Junction-ambient 1 Rating -20 ±12 -3 -2.4 -12 1 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Typ.
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