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CST3400B N-Ch 30V Fast Switching MOSFETs
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
CST3400B Product Summary
BVDSS 30V
RDSON 32mΩ
ID 4.5A
CST3400B SOT23 Pin Configuration
CST3400B Description
The CST3400B is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON
k and efficiency for most of the small power
switching and load switch applications.
e The CST3400B meet the RoHS and Green Product
requirement with full function reliability approved.
eT CST3400B Absolute Maximum Ratings
c Symbol VDS r VGS ID@TA=25℃
u ID@TA=70℃ IDM
o PD@TA=25℃ TSTG S TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.