DESCRIPTION
科 eT CST3400B ABSOLUTE MAXIMUM RATINGS
特 c Symbol VDS r VGS ID@TA=25℃ 源 u ID@TA=70℃ IDM o PD@TA=25℃ TSTG 矽 S TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range p CST3400B Thermal Data i Symbol RθJA Ch RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Rating 30 ±12 4.5 2.8 16.4 1.1 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Typ. ----- Max. 113 --- Unit ℃/W ℃/W TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB: E-mail: Sales@ChipSourceTek.com Tony.Wang@ChipSourceTek.com CST3400B N-Ch 30V Fast Switching MOSFETs CST3400B ELECTRICAL CHARACTERISTICS
(TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Body...