MXB040N10 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The MXB040N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V.

This device is suitable for use as a wide variety of applications.

ChipSourceTek

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Datasheet Details

Part number	MXB040N10
Manufacturer	ChipSourceTek
File Size	1.00 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MXB040N10 Datasheet
Additional preview pages of the MXB040N10 datasheet.

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N-Channel Enhancement Mode Power MOSFET MXB040N10 DESCRIPTION The MXB040N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a wide variety of applications. GENERAL FEATURES APPLICATION  VDS=100V, ID=128A  Uninterruptible power supply RDS(ON)(Typ.)=4.

Published: Oct 9, 2024 |