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MXB040N10 - N-Channel Enhancement Mode Power MOSFET

General Description

The MXB040N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V.

This device is suitable for use as a wide variety of applications.

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Datasheet Details

Part number MXB040N10
Manufacturer ChipSourceTek
File Size 1.00 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXB040N10 Datasheet

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Full PDF Text Transcription (Reference)

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N-Channel Enhancement Mode Power MOSFET MXB040N10 DESCRIPTION The MXB040N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a wide variety of applications. GENERAL FEATURES APPLICATION  VDS=100V, ID=128A  Uninterruptible power supply RDS(ON)(Typ.)=4.