MXB040N10
MXB040N10 is N-Channel Enhancement Mode Power MOSFET manufactured by ChipSourceTek.
DESCRIPTION
The MXB040N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a wide variety of applications.
GENERAL FEATURES
APPLICATION
- VDS=100V, ID=128A
- Uninterruptible power supply
RDS(ON)(Typ.)=4.0mΩ @ VGS=10V
- Hard switched and high frequency
- High Power and current handing capability
- Lead free product is acquired
技 k PINOUT circuits
科 e Te Schematic diagram
Marking and pin Assignment
TO-263-3L top view
特 rc ORDERING INFORMATION
Part Number
源 u MXB040N10
Storage Temperature -55°C to 175°C
Package TO-263
Devices Per Reel 800 o ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise noted)
矽 S Parameter
Drain-Source Voltage(VGS=0V) p Gate-Source Voltage(VDS=0V) i Drain Current-Continuous(TC=25°C)
Drain Current-Continuous(TC=100°C) h Drain Current-Continuous@Current-Pulsed(Note1) C Maximum Power Dissipation(TC=25°C)
Symbol VDS VGS ID
ID IDM(pluse)
Limit 100 ±20 128
81 417 167
Unit V V A
Maximum Power Dissipation(TC=100°C)
Avalanche energy(Note2)
265 m J
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
°C
Thermal Resistance, Junction-to-Case...