• Part: MXB040N10
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: ChipSourceTek
  • Size: 1.00 MB
Download MXB040N10 Datasheet PDF
ChipSourceTek
MXB040N10
MXB040N10 is N-Channel Enhancement Mode Power MOSFET manufactured by ChipSourceTek.
DESCRIPTION The MXB040N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a wide variety of applications. GENERAL FEATURES APPLICATION - VDS=100V, ID=128A - Uninterruptible power supply RDS(ON)(Typ.)=4.0mΩ @ VGS=10V - Hard switched and high frequency - High Power and current handing capability - Lead free product is acquired 技 k PINOUT circuits 科 e Te Schematic diagram Marking and pin Assignment TO-263-3L top view 特 rc ORDERING INFORMATION Part Number 源 u MXB040N10 Storage Temperature -55°C to 175°C Package TO-263 Devices Per Reel 800 o ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise noted) 矽 S Parameter Drain-Source Voltage(VGS=0V) p Gate-Source Voltage(VDS=0V) i Drain Current-Continuous(TC=25°C) Drain Current-Continuous(TC=100°C) h Drain Current-Continuous@Current-Pulsed(Note1) C Maximum Power Dissipation(TC=25°C) Symbol VDS VGS ID ID IDM(pluse) Limit 100 ±20 128 81 417 167 Unit V V A Maximum Power Dissipation(TC=100°C) Avalanche energy(Note2) 265 m J Operating Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C Thermal Resistance, Junction-to-Case...