MXB6888
MXB6888 is N-Channel Enhancement Mode Power MOSFET manufactured by ChipSourceTek.
DESCRIPTION
The MXB6888 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
GENERAL FEATURES
APPLICATION
- VDS=68V, ID=80A @ VGS=10V
RDS(ON)(Typ.)=6.8mΩ @ VGS=10V
- Special Designed for E-Bike Controller
- 48V E-Bike Controller Applications
- Hard Switched and High Frequency
Circuits
Application
- Uninterruptible Power Supply
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
PINOUT
特科技rce Tek Schematic diagram
Marking and pin Assignment
TO-263 top view
源 ou KEY PERFORMANCE PARAMETERS(TA=25°C unless otherwise noted)
矽 S Parameter p VDS @ TC=25°C
RDS(ON)(Typ.) @ VGS=10V i Qg(Typ.) h ID @ TC=25°C CPD @ TC=25°C
Value 68
6.8 56 80
Unit V mΩ n C A
TJ, TSTG
-55 to 175
°C
PACKAGE INFORMATION
Package
TO-263
TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://.Chip Source Tek. E-mail: Tony.Wang@Chip Source Tek. In Fo@Chip Source Tek.
Rev1.2
N-Channel Enhancement Mode Power MOSFET MXB6888
ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit...
