MXB6888 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The MXB6888 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

ChipSourceTek

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Datasheet Details

Part number	MXB6888
Manufacturer	ChipSourceTek
File Size	852.85 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MXB6888 Datasheet
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N-Channel Enhancement Mode Power MOSFET MXB6888 DESCRIPTION The MXB6888 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. GENERAL FEATURES APPLICATION  VDS=68V, ID=80A @ VGS=10V RDS(ON)(Typ.)=6.8mΩ @ VGS=10V  Special Designed for E-Bike Controller  48V E-Bike Controller Applications  Hard Switched and High Frequency Circuits Application  Uninterruptible Power Supply  Ultra Low On-Resistance  High UIS and UIS 100% Test PINOUT rceTek Schematic diagram Marking and pin Assignment TO-263 top view ou KEY PERFORMANCE PARAMETERS(TA=25°C unless otherwise noted) S Parameter p VDS @ TC=25°C RDS(ON)(Typ.

Published: Mar 4, 2025 |