MXD2060K Datasheet | ChipSourceTek

N-Channel Enhancement Mode Power MOSFET MXD2060K DESCRIPTION The MXD2060K uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a wide variety of applications. GENERAL Features APPLICATION - VDS=20V, ID=60A RDS(ON)(Typ.)=6.2mΩ @ VGS=2.5V - Battery Protection - Load switch RDS(ON)(Typ.)=4.8mΩ @ VGS=4.5V - Power management - High Power and current handing capability - Lead free product is acquired - Surface Mount Package PINOUT 科技 Tek Schematic diagram Marking and pin Assignment 特 e ORDERING INFORMATION TO-252 top view 源 rc Device Marking 2060K Storage Temperature -55°C to 150°C Package TO-252 Devices Per Reel 2500 u KEY PERFORMANCE PARAMETERS(TA=25°C unless otherwise noted) 矽 o Parameter Drain-Source Voltage(VGS=0V) S Gate-Source Voltage(VDS=0V) Drain Current-Continuous(TC=25°C)(Note 1) ip Drain Current-Continuous(TC=100°C) Drain Current-Continuous@Current-Pulsed(Note 2) h Maximum Power Dissipation(TC=25°C) Maximum Power Dissipation(TC=100°C) CAvalanche...