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MXN3342 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The MXN3342 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS=30V, ID=35A RDS(ON)(Typ. )=10mΩ @ VGS=4.5V RDS(ON)(Typ. )=6.5mΩ @ VGS=10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet preview – MXN3342

Datasheet Details

Part number MXN3342
Manufacturer ChipSourceTek
File Size 681.81 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN3342 Datasheet
Additional preview pages of the MXN3342 datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET MXN3342 DESCRIPTION The MXN3342 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES  VDS=30V, ID=35A RDS(ON)(Typ.)=10mΩ @ VGS=4.5V RDS(ON)(Typ.)=6.
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