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MXN3345 - P-Channel Enhancement Mode Power MOSFET

General Description

The MXN3345 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a load switch or in PWM and a wide varieer applications.

Key Features

  • VDS =-30V，ID =-30A.
  • RDS(ON) (Typ. )= 12 m Ω @ VGS=-10V.
  • RDS(ON) (Typ. )= 22m Ω @ VGS=-4.5V k High Power and current handing capability e Lead free product is acquired Surface mount package rceT.

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Datasheet Details

Part number MXN3345
Manufacturer ChipSourceTek
File Size 1.07 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN3345 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET Description The MXN3345 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.This device is suitable for use as a load switch or in PWM and a wide varieer applications. MXN3345 Schematic diagram General Features  VDS =-30V，ID =-30A  RDS(ON) (Typ.)= 12 m Ω @ VGS=-10V  RDS(ON) (Typ.)= 22m Ω @ VGS=-4.5V k High Power and current handing capability e Lead free product is acquired Surface mount package rceT Application PWM applications u Load switch Power management 3345 Marking and pin Assignment So PDFN3.3x3.