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PE15D11 - P-Channel Enhancement Mode Power MOSFET

General Description

The PE15D11 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = -18V, ID = -7A RDS(ON) < 23mΩ @ VGS=-4.5V RDS(ON) < 30mΩ @ VGS=-2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PE15D11
Manufacturer ChipSourceTek
File Size 792.35 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE15D11 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE15D11 P-Channel Enhancement Mode Power MOSFET Description The PE15D11 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = -18V, ID = -7A RDS(ON) < 23mΩ @ VGS=-4.5V RDS(ON) < 30mΩ @ VGS=-2.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ek ● Power management Marking and pin assignment SourceT Absolute Maximum Ratings (TA=25℃ unless otherwise noted) pParameter Drain-Source Voltage i Gate-Source Voltage h Drain Current-Continuous CPulsed Drain Current (Note 1) Symbol VDS VGS ID IDM TSSOP-8 Rating -18 ±12 -7 -28 Unit V V A A Maximum Power Dissipation PD 1.