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PE1905 - P-Channel Enhancement Mode Power MOSFET

Download the PE1905 datasheet PDF. This datasheet also covers the PE1905-ChipSourceTek variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PE1905 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-16V, ID =-9A RDS(ON) < 15mΩ @ VGS=-4.5V RDS(ON) < 22mΩ @ VGS=-2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE1905-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE1905
Manufacturer ChipSourceTek
File Size 759.45 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE1905 Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
PE15D11 P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Power MOSFET Description The PE1905 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE1905 General Features ● VDS =-16V, ID =-9A RDS(ON) < 15mΩ @ VGS=-4.5V RDS(ON) < 22mΩ @ VGS=-2.