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PE2012 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: ChipSourceTek

Overview: N-Channel Enhancement Mode Power MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The PE2012 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

PE2012 General

Key Features

  • VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package 技.

PE2012 Distributor