Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Description
The PE2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .
General Features
- VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
D1 G1
G2
D2
S1 S2
Schematic diagram
Marking and pin assignment
Application
- Uni-directional load switch
- Bi-directional load switch
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