semi one PE2012
The PE2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .| Part No. | PE2012 |
|---|---|
| Datasheet | PE2012 Download |
| Manufacturer |  semi one |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V● High power and current handing capability
● Lead free product is acquired
● Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment Application
● Uni-directional load switch
● Bi-directional load switch TSSOP-8 top view
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±12 12 45 2 -55 To 150 Unit V V A A W ℃ Thermal Characteristic T
