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PE2012 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: semi one

Overview: PE2012 N-Channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number PE2012
Manufacturer semi one
File Size 574.74 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet PE2012-semione.pdf

General Description

The PE2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications .

General

Key Features

  • VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment.

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PE2012 Distributor