Datasheet4U Logo Datasheet4U.com

PE2012T - N-Channel Enhancement Mode Power MOSFET

General Description

The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number PE2012T
Manufacturer ChipSourceTek
File Size 781.30 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE2012T Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PE2012 N-Channel Enhancement Mode Power MOSFET semi one
PE2010 CURRENT SENSOR YAGEO
PE2017 N-Channel Enhancement Mode Power MOSFET semi one
PE200GB THYRISTOR MODULE SanRex Corporation
PE2023 P-Channel Enhancement Mode Power MOSFET semi one

Other Datasheets by ChipSourceTek

Part Number Description
PE2012 N-Channel Enhancement Mode Power MOSFET
PE2023 P-Channel Enhancement Mode Power MOSFET
PE2209A P-Channel Power MOSFET
PE2301A P-Channel Enhancement Mode Power MOSFET
PE2302A N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Power MOSFET Description The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE2012T General Features ● VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.