ChipSourceTek PE2012T
The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.| Part No. | PE2012T |
|---|---|
| Datasheet | PE2012T Download |
| Manufacturer |  ChipSourceTek |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications. PE2012TGENERAL FEATURES
● VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V Schematic diagram● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package 技 Application
● Battery Protection k
● Load switch Marking and pin assignment 源特科urceTe
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) 矽 o Drain-Source Voltage Parameter S Gate-Source Voltage p Drain Current-Continuous Pulsed Drain Current (Note 1) i Maximum Power Dissipation Ch Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG TSSOP-8 Rating 18 ±12 12 36 1.5 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 83 ℃/W TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB: E-mail: Tony.Wang@ChipSourceTek.com InFo@ChipSourceTek.com 2020 Aug. v1.0 PE2012TELECTRICAL CHARACTERISTICS
(TA=25℃ un...
