Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Description
The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 18V, ID = 12A
RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V
Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
技 Application
- Battery Protection k
- Load switch
Marking and pin assignment
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