Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
Description
The PE2333A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = -18V, ID = -6A
RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V
Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- PWM applications
技
- Load switch k
- Power management
Marking and pin assignment
源特科urceTe...