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PE2333A - P-Channel Enhancement Mode Power MOSFET

General Description

The PE2333A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -12V,ID = -6.0A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON).

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Datasheet Details

Part number PE2333A
Manufacturer semi one
File Size 813.16 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE2333A Datasheet

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PE2333A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2333A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -12V,ID = -6.0A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) <40mΩ @ VGS=-2.