ChipSourceTek PE4013S
The PE4013S uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.| Part No. | PE4013S |
|---|---|
| Datasheet | PE4013S Download |
| Manufacturer |  ChipSourceTek |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications. D GGENERAL FEATURES
● VDS >40V,ID =8A S Schematic diagram RDS(ON) < 12mΩ @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.5V● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current Application 技
● Power switching application k
● Hard switched and high frequency circuits 科 e
● Uninterruptible power supply Marking and pin Assignment 特 eT SOP-8 top view 源 urc
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol 矽 o Drain-Source Voltage VDS Gate-Source Voltage VGS S TA=25℃ Continuous Drain Current ID ipTA=100℃ Pulsed Drain Current (Note 1) I DM Maximum Power Dissipation TA=25℃ PD Ch Operating Junction and Storage Temperature Range TJ,TSTG Limit 40 ±20 8 5.5 32 2.5 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Parameter Thermal Resistance,Junction-to-Ambient (Note 2) Symbol Typ RθJA 50 Max 80 Unit ℃/W TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB: E-mail: Sales@Chi...
