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PE4435A - P-Channel Enhancement Mode Power MOSFET

General Description

The PE4435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V.

Key Features

  • VDS -30V,ID = -10.5A RDS(ON) < 20mΩ @ VGS=-10V RDS(ON) < 35mΩ @ VGS=-4.5V S Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package k.

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Datasheet Details

Part number PE4435A
Manufacturer ChipSourceTek
File Size 697.10 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE4435A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE4435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V. PE4435A D G < GENERAL FEATURES ● VDS -30V,ID = -10.5A RDS(ON) < 20mΩ @ VGS=-10V RDS(ON) < 35mΩ @ VGS=-4.5V S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package k Application ●Battery Switch e ●Load switch T ●Power management Marking and pin Assignment urceSOP-8topview So Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol ip Drain-Source Voltage VDS Gate-Source Voltage VGS TC =25℃ Ch Continuous Drain Current (TJ =150℃) TC =70℃ TA =25℃ ID Limit -30 ±20 -10.5 -7.5 -7.