Datasheet4U Logo Datasheet4U.com

PE4953 - P-Channel Enhancement Mode Power MOSFET

Download the PE4953 datasheet PDF. This datasheet also covers the PE4953-ChipSourceTek variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PE4953 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = -30V, ID = -5.3A RDS(ON) < 49mΩ @ VGS=-10V RDS(ON) < 85mΩ @ VGS=-4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE4953-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE4953
Manufacturer ChipSourceTek
File Size 684.13 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE4953 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PE4953 P-Channel Enhancement Mode Power MOSFET semi one
PE4946 N-Channel Enhancement Mode Power MOSFET semi one
PE4005 RF CONNECTOR Pasternack Enterprises
PE40F THYRISTOR MODULE SanRex Corporation
PE40N12 N-Channel Enhancement Mode Power MOSFET semi one

Other Datasheets by ChipSourceTek

Part Number Description
PE4953S P-Channel Enhancement Mode Power MOSFET
PE4013S N-Channel Enhancement Mode Power MOSFET
PE4013SA N-Channel Enhancement Mode Power MOSFET
PE4025KC N and P Channel Enhancement Mode Power MOSFET
PE4407A P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Power MOSFET Description The PE4953 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE4953 General Features ● VDS = -30V, ID = -5.3A RDS(ON) < 49mΩ @ VGS=-10V RDS(ON) < 85mΩ @ VGS=-4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch k ● Power management Marking and pin assignment ourceTe Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter S Drain-Source Voltage ip Gate-Source Voltage Drain Current-Continuous h Pulsed Drain Current (Note 1) C Maximum Power Dissipation Symbol VDS VGS ID IDM PD SOP-8 Rating -30 ±20 -5.3 -20 2.