PE4953 Datasheet PDF (P-Channel Enhancement Mode Power MOSFET)

PE4953 - P-Channel Enhancement Mode Power MOSFET

Description

The PE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

VDS = -30V,ID = -5.3A RDS(ON) < 100mΩ @ VGS=-4.5V RDS(ON) < 49mΩ @ VGS=-10V D1 G1 G2 D2 S1 S2 Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Marking and pin Assignment.

Datasheet Details

Part number	PE4953
Manufacturer	semi one
File Size	727.81 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	PE4953 Datasheet
Additional preview pages of the PE4953 datasheet.

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Full PDF Text Transcription

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PE4953 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.3A RDS(ON) < 100mΩ @ VGS=-4.

Published: Dec 3, 2018 |